• WD-200

WD-200

Fully automatic system, maximum working area is 8” wafer. Fulfill chipping-free, delamination-free, undamaged beneath layer and/or residue-free processing.

Fully automatic system, maximum working area is 8” wafer :

-Cold ablation, fulfill chipping-free, delamination-free, undamaged beneath layer and/or residue-free processing.
-Powerful capability, chips with regular or irregular dimensions can be cut as usual.
-Applicable for varieties of materials, e.g., Si, low-k, GaN, GaAs, Al, Cu, Ni, EMC, … and so on.
-Versatile operational modes, machining route can be set by recipe or imported by DXF file.
-Options :
•CO2 snow processor, fulfill residue-free surface after dicing.
•Plasma processor, fulfill high-strength chips.
-Semi-S2 certified.

Meet current and future requirements.

Workpiece

Diameter

8” wafer

Carrier

Wafer mounted on the dicing frame

Laser & Optics

Type

Femto-second laser

Power

<20W

Repetition rate

<1MHz

Processing speed

<2000mm/sec

In-situ power monitor

Moving stage

Working area

210x210mm max.

Speed

1000mm/sec, max.

Resolution

0.1um

Position accuracy

<3um

Z-axis

Stroke

+/- 3 mm

Repeatability

1um, single direction

θ-axis

Stroke

<190°

Repeatability

<2 arc-sec

Vision

Quantity

High & low magnification

Resolution

0.56um for high magnification

Spin Processor

Spin speed

<3000rpm

Clean nozzle

High pressure or Atomizer nozzle selectable

Coating nozzle

flow-rate controlled

Drying nozzle

Pressure regulated

CO2 snow processor
(Optional)

Function

Debris & residue removal

Spin speed

<3000rpm

CO2 consumption

<100g/min.,
Siphon type Bombe

Plasma processor
(Optional)

Function

Defect, debris & residue removal

Working pressure

<200 mtorr

Processing gas

CF4/SF6

MW power

<3000W