• WS-200

WS-200

Fully automatic system, maximum working area is 8” wafer. Linear, curve or segmented grooving and via drilling can be carried out.

Fully automatic system, maximum working area is 8” wafer :

Cold ablation, fulfill chipping-free, delamination-free, undamaged beneath layer and/or residue-free processing.
Powerful capability, linear, curve or segmented grooving and via drilling can be carried out.
•Especially useful for wider and deeper trench.
Applicable for varieties of materials, e.g., Si, low-k, GaN, SiOx, SiNx, Al, Cu, Ni, SiC, Sapphire,  EMC ….and so on.
Versatile operational modes, machining route can be set by recipe or imported by DXF file.
•Options :
•CO2 snow processor, fulfill residue-free surface after dicing.
•Plasma processor, fulfill high-strength chips.
Semi-S2 certified.

Meet current and future requirements.

Workpiece

Diameter

8” wafer-form

Flattening mechanism
(Optional)

<6mm, 
Warpage suppression

Laser & Optics

Type

Femto-second laser

Power

<15W

Repetition rate

<1MHz

Processing speed

<2000mm/sec

In-situ power monitor

Moving stage

Working area

210x210mm max.

Speed

1000mm/sec, max.

Resolution

0.1um

Position accuracy

<3um

Z-axis

Stroke

+/- 3 mm

Repeatability

1um, single direction

θ-axis

Stroke

<190°

Repeatability

<2 arc-sec

Vision

Quantity

High & low magnification

Resolution

0.56um for high magnification

Spin Processor

Spin speed

<3000rpm

Clean nozzle

High pressure or Atomizer nozzle selectable

Coating nozzle

flow-rate controlled

Drying nozzle

Pressure regulated

CO2 snow processor
(Optional)

Function

Debris & residue removal

Spin speed

<3000rpm

CO2 consumption

<100g/min.,
Siphon type Bombe

Plasma processor
(Optional)

Function

Defect, debris & residue removal

Working pressure

<200 mtorr

Processing gas

CF4/SF6

MW power

<3000W